參數(shù)資料
型號: X0202-SOT-223
廠商: 友順科技股份有限公司
英文描述: SCR
中文描述: 可控硅
文件頁數(shù): 2/5頁
文件大?。?/td> 201K
代理商: X0202-SOT-223
UTC X0202/A
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Peak Forward or Reverse Blocking
Current Tj =25
°
C
Tj =125
°
C
Peak Forward On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Gate Non-Trigger Voltage
SCR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R301-006,A
TEST CONDITIONS
V
DRM
=V
RRM,
R
GK
=1k
Ω
MIN
TYP
MAX
5
500
UNIT
μ
A
μ
A
I
DRM
, I
RRM
V
TM
I
GT
V
GT
I
TM
= 2.5A, tp=380
μ
s
VD=12V, RL=140
Ω
VD=12V, RL=140
Ω
V
D
=V
DRM,
R
L
=3.3k
Ω
,
R
GK
=1k
Ω
,
(Tj=125
°
C)
I
T
=50mA, R
GK
=1k
Ω
I
G
=1mA, R
GK
=1k
Ω
V
D
=67%V
DRM,
R
GK
=1k
Ω
,
(Tj=110
°
C)
I
RG
=10
μ
A
(Tj=125
°
C)
(Tj=125
°
C)
1.45
200
0.8
V
μ
A
V
V
GD
0.1
V
Holding Current
Latch Current
Critical Rate of Rise of Off-State
Voltage
Peak Reversed Gate Voltage
Threshold Voltage
Dynamic Resistance
I
H
I
L
5
6
mA
mA
dv/dt
10
V/
μ
s
V
RG
V
TO
Rd
8
V
V
0.9
200
m
Ω
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-t)
PARAMETER
Junction to tab
Junction to ambient
(S=5cm)
VALUE
25
UNIT
°
C/W
Rth(j-a)
60
°
C/W
S=Copper surface under tab
TYPICAL CHARACTERISTICS CURVE
Figure 1.Maximum Average Power Dissipation
vs. Average On-stage Current
P(W)
0.0
0.2
0.1
0.3
0.4
0.6
0.8
0.2
0.0
0.4
0.5
0.6
0.7
0.8 0.9
1.0
1.2
α
=180
°
IT(av)(A)
360
°
Figure 2-1.Average and D.C. On-state Current
vs.Lead Temperature
IT(av)(A)
0
0.2
25
75
0.4
0.6
0.8
50
0.0
100
125
Ttab (
)
1.0
1.2
1.4
α=180°
D.C.
α
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