參數(shù)資料
型號: WV3HG264M72EEU534D4-SG
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA200
封裝: ROHS COMPLIANT, SO-DIMM-200
文件頁數(shù): 6/10頁
文件大?。?/td> 160K
代理商: WV3HG264M72EEU534D4-SG
WV3HG264M72EEU-D4
August 2005
Rev. 0
ADVANCED
5
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
DDR2 IDD SPECIFICATIONS AND CONDITIONS
Includes DDR2 SDRAM components only
0°C ≤ TCASE < +70°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Symbol
Proposed Conditions
534
403
Units
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,530
1,440
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD);
CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is
same as IDD4W
1,620
1,485
mA
IDD2P
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
144
mA
IDD2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE;
Data bus inputs are FLOATING
450
mA
IDD2N
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
540
mA
IDD3P
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0mA
540
mA
Slow PDN Exit MRS(12) = 1mA
270
mA
IDD3N
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,260
1,170
mA
IDD4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
2,430
1,890
mA
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDD4W
2,250
1,890
mA
IDD5B
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
2,385
2,250
mA
IDD6
Self refresh current;
CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING
99
mA
IDD7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC =
tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address
bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following page for
detailed timing conditions
3,105
3,015
mA
Note: IDD specication is based on Samsung components. Other DRAM Manufacturers specication may be different.
相關(guān)PDF資料
PDF描述
WE32K32N-120G2UCA EEPROM 5V MODULE, CQFP68
WED3DG6335V7D2 32M X 64 SYNCHRONOUS DRAM MODULE, DMA168
ZZ1EEB050Z 1 FUNCTIONS, 400 V, 5 A, DATA LINE FILTER
ZZ1EEB332H 1 FUNCTIONS, 400 V, 5 A, DATA LINE FILTER
ZZ1EEB332Y 1 FUNCTIONS, 400 V, 5 A, DATA LINE FILTER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WV3HG264M72EEU534D6GG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM UNBUFFERED
WV3HG264M72EEU534D6MG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM UNBUFFERED
WV3HG264M72EEU534D6SG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM UNBUFFERED
WV3HG264M72EEU534D7IMG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM UNBUFFERED, w/PLL, Mini-DIMM
WV3HG264M72EEU534D7ISG 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR2 SDRAM UNBUFFERED, w/PLL, Mini-DIMM