參數(shù)資料
型號: WSE128K16-73G2TI
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, CQFP68
封裝: 22.40 MM, CERAMIC, QFP-68
文件頁數(shù): 15/15頁
文件大?。?/td> 299K
代理商: WSE128K16-73G2TI
9
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
WSE128K16-XXX
EEPROM DATA POLLING
The WSE128K16-XXX offers a data polling feature for the
EEPROM which allows a faster method of writing to the device.
Figure 11 shows the timing diagram for this function. During a
byte or page write cycle, an attempted read of the last byte
written will result in the complement of the written data on D7
(for each chip.) Once the write cycle has been completed, true
data is valid on all outputs and the next cycle may begin. Data
polling may begin at any time during the write cycle.
EEPROM DATA POLLING CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55
°C to +125°C)
FIG. 10 EEPROM DATA POLLING WAVEFORMS
Parameter
Symbol
Min
Max
Unit
Data Hold Time
tDH
10
ns
OE Hold Time
tOEH
10
ns
OE To Output Valid
tOE
55
ns
Write Recovery Time
tWR
0ns
EWE1-2
t OEH
t DH
t OE
t WR
HIGH Z
ECS1-2
OE
ED7
ADDRESS
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