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參數(shù)資料
| 型號(hào)： | WSE128K16-73G2TC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, CQMA68 |
| 封裝： | CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 15/15頁(yè) |
| 文件大?。?/td> | 635K |
| 代理商： | WSE128K16-73G2TC |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)當(dāng)前第15頁(yè)
WSE128K16-XXX
9
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PRELIMINARY
White Electronic Designs Corp. reserves the right to change products or specications without notice.
March 2005
Rev. 3
EEPROM DATA POLLING
The WSE128K16-XXX offers a data polling feature for
the EEPROM which allows a faster method of writing to
the device. Figure 11 shows the timing diagram for this
function. During a byte or page write cycle, an attempted
read of the last byte written will result in the complement
of the written data on D7 (for each chip.) Once the write
cycle has been completed, true data is valid on all outputs
and the next cycle may begin. Data polling may begin at
any time during the write cycle.
FIGURE 10 – EEPROM DATA POLLING WAVEFORMS
EEPROM DATA POLLING CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Min
Max
Unit
Data Hold Time
tDH
10
ns
OE# Hold Time
tOEH
10
ns
OE# To Output Valid
tOE
55
ns
Write Recovery Time
tWR
0ns
EWE#1-2
ECS#1-2
OE#
ED7
ADDRESS
tOEH
tDH
tOE
tWR
HIGH Z
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| WSE128K16-73G2TCA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TIA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73G2TMA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
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