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參數(shù)資料
| 型號： | WS512K32NBV-20G2MEA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512Kx32 3.3V SRAM MODULE |
| 中文描述： | 512Kx32 3.3V的靜態(tài)存儲器模塊 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 170K |
| 代理商： | WS512K32NBV-20G2MEA |
1
White Microelectronics Phoenix, AZ (602) 437-1520
4
S
WS512K32BV-XXXE
512Kx32 3.3V SRAM MODULE
PRELIMINARY*
FEATURES
I
Access Times of 15
, 17, 20ns
I
MIL-STD-883 Compliant Devices Available
I
Low Voltage Operation
I
Packaging
66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP
(Package 402)
68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square
(Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ
footprint
I
Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8
I
Radiation Tolerant with Epitaxial Layer Die
I
Commercial, Industrial and Military Temperature Ranges
I
3.3 Volt Power Supply
I
BiCMOS
I
TTL Compatible Inputs and Outputs
I
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
I
Weight
WS512K32BV-XG2XE - 8 grams typical
WS512K32NBV-XH2XE - 13 grams typical
* This data sheet describes a product under development, not fully
characterized, and is subject to change without notice.
This speed is Advanced information.
PIN CONFIGURATION FOR WS512K32NBV-XH2XE
TOP VIEW
PIN DESCRIPTION
I/O
0-31
Data Inputs/Outputs
A
0-18
Address Inputs
WE
1-4
Write Enables
CS
1-4
Chip Selects
OE
Output Enable
V
CC
Power Supply
GND
Ground
NC
Not Connected
I/O
8
I/O
9
I/O
10
A
13
A
14
A
15
A
16
A
17
I/O
0
I/O
1
I/O
2
WE
2
CS
2
GND
I/O
11
A
10
A
11
A
12
V
CC
CS
1
NC
I/O
3
I/O
15
I/O
14
I/O
13
I/O
12
OE
A
18
WE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
24
I/O
25
I/O
26
A
6
A
7
NC
A
8
A
9
I/O
16
I/O
17
I/O
18
V
CC
CS
4
WE
4
I/O
27
A
3
A
4
A
5
WE
3
CS
3
GND
I/O
19
I/O
31
I/O
30
I/O
29
I/O
28
A
0
A
1
A
2
I/O
23
I/O
22
I/O
21
I/O
20
11 22 33 44 55 66
1 12 23 34 45 56
BLOCK DIAGRAM
512K x 8
8
I/O
0-7
CS
1
1
512K x 8
8
I/O
8-15
2
512K x 8
8
I/O
16-23
3
512K x 8
8
I/O
24-31
4
A
0-18
OE
WE
CS
2
WE
CS
3
WE
CS
4
WE
February 1998
相關PDF資料 |
PDF描述 |
|---|---|
| WS512K32NBV-20H2 | 512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-20H2CE | POWERLINE: RP30-S_DE - 2:1 Wide Input Voltage Range- 30 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 90% |
| WS512K32NBV-20H2CEA | POWERLINE: RP30-S_DEW - 4:1 Wide Input Voltage Range- 30 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 88% |
| WS512K32NBV-15H2MEA | 512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-17 | 512Kx32 3.3V SRAM MODULE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32NBV-20H2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-20H2CE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-20H2CEA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-20H2IE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512Kx32 3.3V SRAM MODULE |
| WS512K32NBV-20H2IEA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:512Kx32 3.3V SRAM MODULE |
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