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參數(shù)資料
| 型號(hào)： | WS512K32N-20G4TM |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 |
| 封裝： | 40 X 40 MM, 3.50 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 577K |
| 代理商： | WS512K32N-20G4TM |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS512K32-XXX
May 2006
Rev. 17
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
VCC+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
Parameter
Symbol
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
A
Operating Supply Current x 32 Mode
ICC x 32
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
660
mA
Standby Current
ISB
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
80
mA
Output Low Voltage
VOL
IOL = 6mA for 15 - 35ns,
IOL = 2.1mA for 45 - 55ns, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4.0mA for 15 - 35ns,
IOH = -1.0mA for 45 - 55ns, VCC = 4.5
2.4
V
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
DATA RETENTION CHARACTERISTICS
(Ta = -55°C to +125°C)
Parameter
Symbol
Conditions
Min
Max
Units
Data Retention Supply Voltage
VDR
CS ≥ VCC 0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
28
mA
Low Power Data Retention Current
(WS512K32L-XXX)
ICCDR2
VCC = 3V
16
mA
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
CAPACITANCE
Ta = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4# capacitance
HIP (PGA)
CWE
VIN = 0 V, f = 1.0 MHz
20
pF
CQFP G4T
50
CQFP G2U/G2L
20
CS1-4# capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS512K32N-20H1C | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 20NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS512K32N-20H1CA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-20H1I | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 20NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS512K32N-20H1IA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-20H1M | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 20NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
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