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參數(shù)資料
| 型號(hào)： | WS1M8V-25CMA |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 25 ns, CDIP32 |
| 封裝： | 0.600 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-32 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 319K |
| 代理商： | WS1M8V-25CMA |
WS1M8V-XCX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October, 2002
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ADVANCED*
2x512Kx8 DUALITHIC SRAM
FEATURES
■
Access Times 17, 20, 25, 35, 45, 55ns
■
Evolutionary, Corner Power/Ground Pinout
■
Packaging:
32 pin, Hermetic Ceramic DIP (Package 300)
■
Organized as two banks of 512Kx8
■
Commercial, Industrial and Military Temperature
Ranges
■
3.3V Power Supply
■
Low Power CMOS
■
TTL Compatible Inputs and Outputs
■
Output Enable Internally tied to GND.
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
NOTE:
1. CS#1 and CS#2 are used to select the lower and upper 512Kx8 of the
device. CS#1 and CS#2 must not be enabled at the same time.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
A15
A17
WE#
A13
A8
A9
A11
CS2#
A10
CS1#
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION FOR WS1M8V-XCX
32 DIP
TOP VIEW
BLOCK DIAGRAM
512K x 8
A0-18
WE#
CS1#
CS2#
I/O0-7
(1)
A0-18
Address Inputs
I/O0-7
Data Input/Output
CS#1-2
Chip Selects
WE#
Write Enable
VCC
+3.3V Power Supply
GND
Ground
PIN DESCRIPTION
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| WS1M8V-35CC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2x512Kx8 DUALITHICTM SRAM |
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