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參數(shù)資料
| 型號： | WS128K32N-45G2TMEA |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68 |
| 封裝： | 22.4 X 22.4 MM, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 383K |
| 代理商： | WS128K32N-45G2TMEA |
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WS128K32-XG2TXE
December 2000
Rev. 0
ADVANCED*
128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT
TTL Compatible Inputs and Outputs
Built in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
Weight
WS128K32-XG2TXE – 8 grams typical
Radiation tolerant with epitaxial layer on die.
6T memory cells provide excellent protection
against soft errors
* This product is under development, is not qualied or characterized and is subject to
change or cancellation without notice.
FEATURES
Access Times of 35, 45, 55ns
Packaging
68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"),
(Package 509)
Organized as 128Kx32; User Congurable as
256Kx16 or 512Kx8
Low Power Data Retention
Commercial, Industrial and Military Temperature
Ranges
5V Power Supply
Low Power CMOS
Pin Description
I/O0-31
Data Inputs/Outputs
A0-16
Address Inputs
WE1-4#
Write Enables
CS1-4#
Chip Selects
OE#
Output Enable
VCC
Power Supply
GND
Ground
NC
Not Connected
Block Diagram
Top View
FIGURE 1 – PIN CONFIGURATION FOR WS128K32N-XG2TXE
WE1#CS1#CS2#CS3#CS4#
WE4#
WE3#
WE2#
128K x 8
OE#
A0-16
I/O0-7
I/O24-31
I/O16-23
I/O8-15
88
8
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
CS
1#
OE#
CS
2#
NC
WE
2#
WE
3#
WE
4#
NC
A
0
A
1
A
2
A
3
A
4
A
5
CS
3#
GND
CS
4#
WE
1#
A
6
A
7
A
8
A
9
A
10
V
CC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
The White 68 lead G2T CQFP lls
the same t and function as the
JEDEC 68 lead CQFJ or 68 PLCC.
But the G2T has the TCE and lead
inspection advantage of the CQFP
form.
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| WS-512K32-70HQ | 2M X 8 MULTI DEVICE SRAM MODULE, 70 ns, CPGA66 |
| WS-512K32-100HM | 2M X 8 MULTI DEVICE SRAM MODULE, 100 ns, CPGA66 |
| WF4M8-120OPI5 | 4M X 8 FLASH 5V PROM, 120 ns, CDSO56 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WS128K32N-45G2TQE | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-45G2TQEA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SRAM MULTICHIP PACKAGE, RADIATION TOLLERANT |
| WS128K32N-45H1C | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS128K32N-45H1I | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS128K32N-45H1M | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 45NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
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