參數(shù)資料
型號: WEDPN8M72VR-66BC
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 8M X 72 SYNCHRONOUS DRAM MODULE, 7.5 ns, PBGA219
封裝: 32 X 25 MM, PLASTIC, BGA-219
文件頁數(shù): 8/12頁
文件大?。?/td> 423K
代理商: WEDPN8M72VR-66BC
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M72VR
WEDPN8M72VR-----XBX
XBX
T
TT
TTABLE
ABLE
1 - B
1 - BURST
URST
D
DEFINITION
EFINITION
Burst
Starting Column
Order of Accesses Within a Burst
Length
Address
A0
2
0
0-1
1
1-0
A1
A0
0
0-1-2-3
4
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
1
3-0-1-2
3-2-1-0
A2
A1
A0
0
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
8
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
Full
n = A0-9/8/7
Cn, Cn + 1, Cn + 2
Page
Cn + 3, Cn + 4...
Not Supported
(y)
(location 0-y)
…Cn - 1,
Cn…
Type = Sequential
Type = Interleaved
FFFFFIG
IG
. 3
. 3 M
M
MODE
ODE
R
RR
RREGISTER
EGISTER
D
DEFINITION
EFINITION
NOTES:
1. For full-page accesses: y = 512.
2. For a burst length of two, A1-8 select the block-of-two burst; A0 selects the
starting column within the block.
3. For a burst length of four, A2-8 select the block-of-four burst; A0-1 select the
starting column within the block.
4. For a burst length of eight, A3-8 select the block-of-eight burst; A0-2 select
the starting column within the block.
5. For a full-page burst, the full row is selected and A0-8 select the starting
column.
6. Whenever a boundary of the block is reached within a given sequence
above, the following access wraps within the block.
7. For a burst length of one, A0-8 select the unique column to be accessed, and
Mode Register bit M3 is ignored.
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