- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄204017 > WED48S8030E10SI (MICROSEMI CORP-PMG MICROELECTRONICS) 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 PDF資料下載
參數(shù)資料
| 型號： | WED48S8030E10SI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | TSOP2-54 |
| 文件頁數(shù)： | 1/26頁 |
| 文件大?。?/td> | 920K |
| 代理商： | WED48S8030E10SI |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁
WED48S8030E
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specications without notice.
February, 2002
Rev. 2
2M x 8 Bits x 4 Banks Synchronous DRAM
DESCRIPTION
The WED48S8030E is 67,108,864 bits of synchronous high
data rate DRAM organized as 4 x 2,097,152 words x 8 bits.
Synchronous design allows precise cycle control with the
use of system clock, I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
Available in a 54 pin TSOP type II package the
WED48S8030E is tested over the industrial temp range (-
40C to +85C) providing a solution for rugged main memory
applications.
FEATURES
Single 3.3V power supply
Fully Synchronous to positive Clock Edge
Clock Frequency = 125, 100MHz
SDRAM CAS# Latency = 2
Burst Operation
Sequential or Interleave
Burst length = programmable 1,2,4,8 or full page
Burst Read and Write
Multiple Burst Read and Single Write
DATA Mask Control
Auto Refresh (CBR) and Self Refresh
4096 refresh cycles across 64ms
Automatic and Controlled Precharge Commands
Suspend Mode and Power Down Mode
Industrial Temperature Range
Pin Conguration
FIG. 1
Pin Description
A0-11
Address Inputs
BA0, BA1
Bank Select Addresses
CE#
Chip Select
WE#
Write Enable
CK
Clock Input
CKE
Clock Enable
DQ0-7
Data Input/Output
DQM
Data Input/Output Mask
RAS#
Row Address Strobe
CAS#
Column Address Strobe
VCC
Power (3.3V)
VCCQ
Data Output Power
VSS
Ground
VSSQ
Data Output Ground
NC
No Connection
VSS
DQ7
VSSQ
NC
DQ6
VCCQ
NC
DQ5
VSSQ
NC
DQ4
VCCQ
NC
VSS
NC/RFU
DQM
CK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
VCC
DQ0
VCCQ
NC
DQ1
VSSQ
NC
DQ2
VCCQ
NC
DQ3
VSSQ
NC
VCC
NC
WE#
CAS#
RAS#
CE#
BA0
BA1
A10/AP
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
TERMINAL
CONNECTIONS
(T
OP
VIEW)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WED7P128CFA7001I25 | 8M X 16 FLASH 3V PROM CARD, 250 ns, UUC50 |
| WED8L24514V15BI | 512K X 24 MULTI DEVICE SRAM MODULE, 15 ns, PBGA119 |
| WED9LAPC2C16P8BC | 4M X 32 SYNCHRONOUS DRAM, PBGA153 |
| WEDPN4M64V-125BC | 4M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219 |
| WEDPN4M64V-125BI | 4M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA219 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WED48S8030E8SI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2M x 8 Bits x 4 Banks Synchronous DRAM |
| WED7F2324XDNSN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Intel/Sharp Flash Modules |
| WED7F2324XDNSN12C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4Mx32 / 2x4Mx32 INTEL J3 BASED, FLASH MODULE |
| WED7F2325ZXEBSN12C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family |
| WED7F2325ZXEBSN15C | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。