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  • 參數(shù)資料
    型號: WED3DG6463V75D2
    廠商: MICROSEMI CORP-PMG MICROELECTRONICS
    元件分類: DRAM
    英文描述: 64M X 64 SYNCHRONOUS DRAM MODULE, DMA168
    封裝: DIMM-168
    文件頁數(shù): 4/6頁
    文件大?。?/td> 459K
    代理商: WED3DG6463V75D2
    4
    White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
    Aug. 2002 Rev. 0
    ECO #15455
    WED3DG6463V-D2
    OPERATING CURRENT CHARACTERISTICS
    (VCC = 3.3V, TA = 0°C to +70°C)
    Notes: 1. Measured with outputs open.
    2. Refresh period is 64ms.
    3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
    Version
    Parameter
    Symbol
    Conditions
    133
    100
    Units Note
    Operating Current
    ICC1
    Burst Length = 1
    1200
    1040
    mA
    1
    (One bank active)
    tRC tRC(min)
    IOL = 0mA
    Precharge Standby Current
    ICC2P
    CKE VIL(max), tCC = 10ns
    35
    mA
    in Power Down Mode
    ICC2PS
    CKE & CLK VIL(max), tCC =
    35
    Icc2N
    CKE VIH(min), CS VIH(min), tcc = 10ns
    Precharge Standby Current
    Input signals are charged one time during 20
    320
    in Non-Power Down Mode
    Icc2NS
    CKE VIH(min), CLK VIL(max), tcc =
    mA
    Input signals are stable
    160
    Active standby current in
    ICC3P
    CKE VIL(max), tCC = 10ns
    100
    mA
    power-down mode
    ICC3PS
    CKE & CLK VIL(max), tcc =
    100
    ICC3N
    CKE VIH(min), CS VIH(min), tcc = 10ns
    Active standby current in
    Input signals are changed one time during 20ns
    480
    mA
    non power-down mode
    ICC3NS
    CKE VIH(min), CLK VIL(max), tcc =
    input signals are stable
    400
    mA
    Io = mA
    Operating current (Burst mode)
    ICC4
    Page burst
    1280
    1120
    mA
    1
    4 Banks activated
    tCCD = 2CLK
    Refresh current
    ICC5
    tRC tRC(min)
    2000
    1760
    mA
    2
    Self refresh current
    ICC6
    CKE 0.2V
    50
    mA
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