- 您現(xiàn)在的位置：買賣IC網 > PDF目錄245677 > WED3DG6435V10D1I (WHITE ELECTRONIC DESIGNS CORP) 32M X 64 SYNCHRONOUS DRAM MODULE, DMA144 PDF資料下載
參數(shù)資料
| 型號： | WED3DG6435V10D1I |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 425K |
| 代理商： | WED3DG6435V10D1I |
WED3DG6435V-D1
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
WED3DG6435V-D1
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCCQ/VSSQ)
Version
Parameter
Symbol
Conditions
133
100
Units
Note
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
960
880
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
20
mA
ICC2PS
CKE & CK ≤ VIL(max), tCC = ∞
20
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc =10ns
Input signals are charged one time during 20ns
130
mA
ICC2NS
CKE ≥ VIH(min), CK ≤VIL(max), tCC = ∞
Input signals are stable
115
Active Standby Current in
Power-Down Mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CK ≤ VIL(max), tCC = ∞
50
Active Standby Current in
Non-Power Down Mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
240
mA
ICC3NS
CKE ≥ VIH(min), CK ≤ VIL(max), tcc = ∞
Input signals are stable
200
mA
Operating Current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CK
1120
920
mA
1
Refresh Current
ICC5
tRC ≥ tRC(min)
1760
1680
mA
2
Self Refresh Current
ICC6
CKE ≤ 0.2V
25
mA
相關PDF資料 |
PDF描述 |
|---|---|
| WMS512K8-100CQ | 512K X 8 STANDARD SRAM, 100 ns, CDIP32 |
| WF128K64-220G4WI5 | 1M X 8 FLASH 5V PROM MODULE, 220 ns, CQFP116 |
| WS128K32N-35H1IA | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CHIP66 |
| WE256K16-60CI5A | 256K X 16 FLASH 5V PROM MODULE, 60 ns, CDMA40 |
| WE256K16-90CC5 | 256K X 16 FLASH 5V PROM MODULE, 90 ns, CDMA40 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WED3DG6435V10JD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75D1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V75JD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
| WED3DG6435V7AD1 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:256MB - 32Mx64 SDRAM UNBUFFERED |
發(fā)布緊急采購，3分鐘左右您將得到回復。