參數(shù)資料
型號: WED2DG472512V65D2
元件分類: SRAM
英文描述: 2M X 72 MULTI DEVICE SRAM MODULE, 3.7 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 4/9頁
文件大?。?/td> 190K
代理商: WED2DG472512V65D2
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED2DG472512V-D2
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Relative to Vss
-0.3V to +4.6V
Vin
-0.3V to Vcc +0.5V
Storage Temperature
-55
°C to + 125°C
Operating Temperature (Commercial)
0
°C to +70°C
Operating Temperature (Industrial)
-40
°C to +85°C
Short Circuit Output Current
100mA
*Stressgreaterthanthoselistedunder"AbsoluteMaximumRatings"maycausepermanentdamage
tothedevice. Thisisastressrating onlyandfunctionaloperationofthedeviceattheseorany
otherconditionsgreaterthanthoseindicatedintheoperationalsectionsofthisspecificationisnot
implied. Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Sym
Min
Typ
Max
Units
Supply Voltage
Vcc
3.3
3.6
V
Supply Voltage
Vss
00
0
V
Input High
ViH
2.0
3.0
Vcc+0.3
V
Input Low
ViL
-0.3
0
0.3
V
Input Leakage
ILi
-2
1
2
A
Output Leakage
ILo
-2
1
2
A
AC TEST CONDITIONS
Input Pulse Levels
Vss to 3.0V
Input and Output Timing Ref.
1.25V
Output Test Equivalencies
see figure at left
DC ELECTRICAL CHARACTERISTICS READ CYCLE
Max
Description
Sym
Typ
5.0
6.0
6.5
7.0
Units
Power Supply Current
Icc1
1.9
2.7
2.5
2.4
2.3
A
Power Supply Current
Icc
875
1.8
1.3
A
Device Selected, No Operation
Snooze Mode
IccZZ
270
350
mA
CMOS Standby
Icc3
500
700
mA
Clock Running-Deselect
IccK
900
1.1
1.0
A
RL = 50
VL = 1.25V
DQ Output
Z0 = 50
Z0 = 50
AC TEST LOAD
Output Test Equivalencies
SYNCHRONOUS ONLY – TRUTH TABLE
Operation
E1
E2
E3
E4
GW
G
ZZ
CLK
DQ
Synchronous Write - Bank 1
L
H
L
H
L
High-Z
Synchronous Read - Bank 1
L
H
L
Synchronous Write - Bank 2
H
L
H
L
H
L
High-Z
Synchronous Read - Bank 2
H
L
H
L
Synchronous Write - Bank 3
H
L
H
L
H
L
High-Z
Synchronous Read - Bank 3
H
L
H
L
Synchronous Write - Bank 4
H
L
H
L
High-Z
Synchronous Read - Bank 4
H
L
H
L
Snooze Mode
X
H
X
High-Z
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