- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄245686 > WE512K16-200G4Q (MICROSEMI CORP-PMG MICROELECTRONICS) 512K X 16 EEPROM 5V MODULE, 200 ns, CQFP68 PDF資料下載
參數(shù)資料
| 型號(hào)： | WE512K16-200G4Q |
| 廠(chǎng)商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | PROM |
| 英文描述： | 512K X 16 EEPROM 5V MODULE, 200 ns, CQFP68 |
| 封裝： | 40 MM, HERMETIC SEALED, CERAMIC, QFP-68 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 373K |
| 代理商： | WE512K16-200G4Q |
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WE512K16-XG4X
April 1999
Rev. 2
White Electronic Designs Corp. reserves the right to change products or specications without notice.
PAGE WRITE OPERATION
The module has a page write operation that allows one
to 128 words of data to be written into the device and
consecutively loads during the internal programming
period. Successive words may be loaded in the same
manner after the rst data word has been loaded. An
internal timer begins a time out operation at each write
cycle. If another write cycle is completed within 150μs
or less, a new time out period begins. Each write cycle
restarts the delay period. The write cycles can be continued
as long as the interval is less than the time out period.
The usual procedure is to increment the least signicant
address lines from A0 through A6 at each write cycle. In this
manner a page of up to 128 words can be loaded in to the
EEPROM in a burst mode before beginning the relatively
long interval programming cycle.
After the 150μs time out is completed, the EEPROM begins
an internal write cycle. During this cycle the entire page
of words will be written at the same time. The internal
programming cycle is the same regardless of the number
of words accessed.
FIGURE 7 – PAGE MODE WRITE WAVEFORM
PAGE WRITE CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Page Mode Write Characteristics
Symbol
Unit
Parameter
Min
Max
Write Cycle Time, TYP = 6ms
tWC
10
ms
Address Set-up Time
tAS
0ns
Address Hold Time (1)
tAH
50
ns
Data Set-up Time
tDS
50
ns
Data Hold Time
tDH
0ns
Write Pulse Width
tWP
100
ns
Word Load Cycle Time
tBLC
150
μs
Write Pulse Width High
tWPH
50
ns
1. Page address must remain valid for duration of write cycle.
OE#
ADDRESS (1)
CS#
WE#
VALID
ADDRESS
WORD 0
WORD 1
WORD 2
WORD 3
WORD 126
WORD 127
tAH
tAS
DATA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WS512K16-25DLMA | 512K X 16 MULTI DEVICE SRAM MODULE, 25 ns, CDSO44 |
| WS512K16-25FLIA | 512K X 16 MULTI DEVICE SRAM MODULE, 25 ns, CDFP44 |
| WV3EG216M64STSU335D4SG | 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA200 |
| WV3HG2128M64EEU806D4MG | 256M X 64 DDR DRAM MODULE, ZMA200 |
| WPS128K32GV-15PJC | 512K X 8 MULTI DEVICE SRAM MODULE, 15 ns, PQMA68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WE512K16-200G4QA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx16 CMOS EEPROM MODULE |
| WE512K16-XG4X | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:EEPROM MCP |
| WE512K8 | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
| WE512K8-150CC | 制造商:Microsemi Corporation 功能描述:512K X 8 EEPROM MODULE, 150NS, 32 DIP, COMMERCIAL SCREENED - Bulk |
| WE512K8-150CCA | 制造商:WEDC 制造商全稱(chēng):White Electronic Designs Corporation 功能描述:512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。