參數(shù)資料
型號(hào)： W949D2CBJX5E
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 16M X 32 DDR DRAM, 5 ns, PBGA90
封裝： 8 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-90
文件頁數(shù)： 30/60頁
文件大?。?/td> 1160K
代理商： W949D2CBJX5E
W949D6CB / W949D2CB
512Mb Mobile LPDDR
Publication Release Date: Jun, 14, 2011
- 36 -
Revision A01-006
7.6.5 Concatenated Write Bursts
An example of concatenated write bursts is shown in figure below.
BA,Col b
WRITE
NOP
CK
Command
Address
1) DI b (n)= Data in to column b (column n)
2)3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
3) Non-interrupted bursts of 4 are shown.
4) Each WRITE command may be to any active bank
NOP
WRITE
= Don't Care
DQS
DQ
DM
DQS
DQ
DM
tDQSSmin
BA,Col n
tDQSSmax
DI b
DI n
7.6.6 Non-Consecutive Write Bursts
An example of non-consecutive write bursts is shown in figure below.
BA,Col n
BA,Col b
WRITE
NOP
CK
Command
Address
1) Dl b (n)= Data in to column b (or column n)
2) 3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
3) Non-interrupted bursts of 4 are shown.
4) Each WRITE command may be to any active bank and may be to the same or different devices.
NOP
WRITE
= Don't Care
DQS
DQ
DM
tDQSSmax
BA,Col n
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W949D2CBJX5ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ
W949D2CBJX5I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX5I TR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 200MHZ, INDUST
W949D2CBJX6E 制造商:Winbond Electronics Corp 功能描述:DRAM Chip Mobile LPDDR SDRAM 512M-Bit 16Mx32 1.8V 90-Pin VFBGA
W949D2CBJX6ETR 制造商:Winbond Electronics Corp 功能描述:512M MDDR, X32, 166MHZ, 65NM
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