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參數(shù)資料
| 型號： | W49F002UP12B |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | Reed Relay; Contacts:SPST; Contact Carry Current:1.5A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 256K X 8 FLASH 5V PROM, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 1/23頁 |
| 文件大?。?/td> | 303K |
| 代理商： | W49F002UP12B |
W49F002U
256K
×
8 CMOS FLASH MEMORY
Publication Release Date: April 2000
- 1 -
Revision A2
GENERAL DESCRIPTION
The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K
×
8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
PP
is
not required. The unique cell architecture of the W49F002U results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Byte-by-Byte programming: 35
μ
S (typ.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 70/90/120 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
One 16K byte Boot Block with Lockout
protection
Two 8K byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20
μ
A (typ.)
Automatic program and erase timing with
internal V
PP
generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard byte-wide pinouts
Available packages: 32-pin DIP and 32-pin
TSOP and 32-pin-PLCC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W49F002UP70B | 256K X 8 CMOS FLASH MEMORY |
| W49F002UP90B | Reed Relay; Contacts:SPST; Contact Carry Current:1.5A; Coil Voltage DC Max:12V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| W49F020Q-70 | 256K X 8 CMOS FLASH MEMORY |
| W49F020 | 256K X 8 CMOS FLASH MEMORY |
| W49F020-70B | 256K X 8 CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W49F002UP70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UP90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UT12B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UT70B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
| W49F002UT90B | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY |
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