參數(shù)資料
型號(hào)： W3HG264M64EEU806D6GG
廠(chǎng)商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi)： DRAM
英文描述： 128M X 64 DDR DRAM MODULE, DMA240
封裝： ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù)： 6/11頁(yè)
文件大小： 0K
代理商： W3HG264M64EEU806D6GG
W3HG264M64EEU-D6
July 2007
Rev. 1
ADVANCED
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Unit
VCC
Voltage on VCC pin relative to VSS
- 0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
- 0.5
2.3
V
TSTG
Storage Temperature
-55
100
°C
TCASE
Device Operating Temperature
0
85
°C
IL
Input leakage current; Any input 0V<VIN<VCC;
VREF input 0V<VIN<<0.95; Other pins not
under test = 0V
Command/Address, RAS#,
CAS#, WE#
-80
80
uA
CS#, CKE
-40
40
uA
CK, CK#
-30
30
uA
DM
-10
10
uA
IOZ
Output leakage current; 0V<VOUT<VCCQ; DQs
and ODT are disable
DQ, DQS, DQS#
-10
10
uA
IVREF
VREF leakage current; VREF = Valid VREF level
-32
32
uA
DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply Voltage
VCC
1.7
1.8
1.9
V
3
I/O Reference Voltage
VREF
0.49 x VCC
0.50 x VCC
0.51 x VCC
V1
I/O Termination Voltage
VTT
VREF-0.04
VREF
VREF+0.04
V
2
SPD Supply Voltage
VCCSPD
1.7
-
3.6
V
Notes:
1
VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-1 percent of the
DC value. Peak-to-peak AC noise on VREF may not exceed +/-2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
3. VCCQ of all IC's are tied to VCC.
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