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參數資料
| 型號： | W3HG2128M64EEU403XD4IMG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200 |
| 封裝： | ROHS COMPLIANT, SODIMM-200 |
| 文件頁數： | 9/13頁 |
| 文件大?。?/td> | 188K |
| 代理商： | W3HG2128M64EEU403XD4IMG |
W3HG2128M64EEU-D4
January 2008
Rev. 7
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
OPERATING TEMPERATURE CONDITION
Parameter
Symbol
Rating
Unit
Note
Operating temperature (Industrial)
TOPER
-40 to 85
°C
1
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDED JESD51.2
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH(DC)
VREF + 0.125
VCC + 0.300
V
Input Low (Logic 0) Voltage
VIL(DC)
-0.300
VREF - 0.125
V
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
Min
Max
Units
Input High (Logic 1) Voltage DDR2-400 & DDR2-533
VIH(AC)
VREF + 0.250
-
V
Input Low (Logic 1) Voltage DDR2-667 & DDR2-800
VIH(AC)
VREF + 0.200
-
V
Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
VIL(AC)
-
VREF - 0.250
V
Input Low (Logic 0) Voltage DDR2-667 & DDR2-800
VIL(AC)
-
VREF - 0.200
V
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相關代理商/技術參數 |
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