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參數(shù)資料
| 型號： | W3EG7266S265D3SG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | ROHS COMPLIANT, DIMM-184 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 173K |
| 代理商： | W3EG7266S265D3SG |
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG7266S-D3
October 2005
Rev. 3
PRELIMINARY
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCC
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
9W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
ABSOLUTE MAXIMUM RATINGS
DC CHARACTERISTICS
0°C
≤ TA ≤ 70°C, VCC = 2.5V ± 0.2V
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
2.3
2.7
V
Supply Voltage
VCC
2.3
2.7
V
Reference Voltage
VREF
1.15
1.35
V
Termination Voltage
VTT
1.15
1.35
V
Input High Voltage
VIH
VREF + 0.15
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
VREF -0.15
V
Output High Voltage
VOH
VTT + 0.76
—
V
Output Low Voltage
VOL
—VTT-0.76
V
CAPACITANCE
TA = 25°C. f = 1MHz, VCC = 2.5V
Parameter
Symbol
Max
Unit
Input Capacitance (A0-A12)
CIN1
6.5
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
6.5
pF
Input Capacitance (CKE0)
CIN3
6.5
pF
Input Capacitance (CK0#,CK0)
CIN4
5.5
pF
Input Capacitance (CS0#)
CIN5
6.5
pF
Input Capacitance (DQM0-DQM8)
CIN6
8pF
Input Capacitance (BA0-BA1)
CIN7
6.5
pF
Data input/output capacitance (DQ0-DQ63)(DQS)
COUT
8pF
Data input/output capacitance (CB0-CB7)
COUT
8pF
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