參數(shù)資料
型號: W3EG7266S202BD4I
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 64M X 72 DDR DRAM MODULE, 0.8 ns, DMA200
封裝: SODIMM-200
文件頁數(shù): 12/13頁
文件大?。?/td> 208K
代理商: W3EG7266S202BD4I
W3EG7266S-AD4
-BD4
8
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
October 2004
Rev. 7
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
DDR400: VCC = VCCQ = +2.6V ± 0.1V
AC CHARACTERISTICS
403
355
262
265
202
PARAMETER
SYMBOL MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS NOTES
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
17
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
21111
tCK
Data valid output window
na
tQH - tDQSQ
tQH - tDQSQ
ns
22
REFRESH to REFRESH command interval
tREFC
70.3
μs21
Average periodic refresh interval
tREFI
7.8
μs21
Terminating voltage delay to VCC
tVTD
00000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
80
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
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