- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361781 > W3EG6462S263JD3 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED PDF資料下載
參數(shù)資料
| 型號(hào)： | W3EG6462S263JD3 |
| 英文描述： | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| 中文描述： | 512MB的- 2x32Mx64 DDR SDRAM內(nèi)存緩沖 |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 250K |
| 代理商： | W3EG6462S263JD3 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
White Electronic Designs
1
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
ADVANCED*
W3EG6462S-D3
-JD3
May 2005
Rev. 4
FEATURES
Double-data-rate architecture
DDR200, DDR266, DDR333 and DDR400
JEDEC design specified
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Dual Rank
Power supply:
V
CC
= V
CCQ
= +2.5V ±0.2V (100, 133 and 166
MHz)
V
CC
= V
CCQ
= +2.6V ±0.1V (200 MHz)
Standard 184 pin DIMM package
JD3 PCB height: 30.48 (1.20") MAX
NOTE: Consult factory for availability of:
RoHS compliant products
Vendor source control options
Industrial temperature option
DESCRIPTION
The W3EG6462S is a 2x32Mx64 Double Data Rate
SDRAM memory module based on 256Mb DDR SDRAM
components. The module consists of sixteen 32Mx8 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184 pin
FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
512MB – 2x32Mx64 DDR SDRAM UNBUFFERED
OPERATING FREQUENCIES
DDR333 @CL=2.5
DDR266 @CL=2.5
166MHz
2.5-3-3
DDR400 @CL=3
200MHz
3-3-3
DDR266 @CL=2
133MHz
2-3-3
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR200 @CL=2
100MHz
2-2-2
Clock Speed
CL-t
RCD
-t
RP
133MHz
2-3-3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3EG6462S265D3 | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S265JD3 | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S335D3 | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6467S-D4 | 512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG64M64ETSU335D4IMG | 512MB - 64Mx64 DDR SDRAM, UNBUFFERED, SO-DIMM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3EG6462S265D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S265JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S335D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S335JD3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
| W3EG6462S403D3 | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:512MB - 2x32Mx64 DDR SDRAM UNBUFFERED |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。