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參數(shù)資料
| 型號(hào)： | W3E64M16S-266NBI |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.75 ns, PBGA60 |
| 封裝： | 10 X 12.50 MM, 1.50 MM HEIGHT, PLASTIC, BGA-60 |
| 文件頁(yè)數(shù)： | 3/17頁(yè) |
| 文件大小： | 493K |
| 代理商： | W3E64M16S-266NBI |
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White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E64M16S-XNBX
May 2008
Rev. 0
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-8
8
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-5
5
μA
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12
-
mA
IOL
12
-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
ICC SPECIFICATIONS AND CONDITIONS
(NOTES 1-5, 10, 12, 14, 46)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
MAX
333Mbs 250Mbs
266Mbs
200Mbs Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
changing once per clock cyle; Address and control inputs changing once every two clock cycles; (22, 47)
ICC0
260
230
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT =
0mA; Address and control inputs changing once per clock cycle (22, 47)
ICC1
320
290
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE
= LOW; (23, 32, 49)
ICC2P
10
mA
IDLE STANDBY CURRENT: CS = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (50)
ICC2F
90
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE =
LOW (23, 32, 49)
ICC3P
70
60
mA
ACTIVE STANDBY CURRENT: CS = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK =
tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle (22)
ICC3N
100
90
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)
ICC4R
330
290
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs
changing once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
ICC4W
390
320
270
mA
AUTO REFRESH CURRENT
tREFC = tRC (MIN) (49)
ICC5
580
560
mA
tREFC = 7.8125μs (27, 49)
ICC5A
20
mA
SELF REFRESH CURRENT: CKE 0.2V
Standard (11)
ICC6
10
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);
Address and control inputs change only during Active READ or WRITE commands. (22, 48)
ICC7
810
800
700
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3E64M16S-266NBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-266SBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E64M16S-266SBI | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M16S-266SBM | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 266 MHZ, 60 PBGA, MIL-TEMP. - Bulk |
| W3E64M16S-333NBC | 制造商:Microsemi Corporation 功能描述:64M X 16 DDR, 2.5V, 333 MHZ, 60 PBGA, COMMERCIAL TEMP. - Bulk |
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