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參數(shù)資料
| 型號(hào)： | W3DG7217V75D2 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 166K |
| 代理商： | W3DG7217V75D2 |
4
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3DG7217V-D2
May 2004
Rev. 2
PRELIMINARY
OPERATING CURRENT CHARACTERISTICS
VCC = 3.3V, 0°C ≤ TA ≤ 70°C
Notes: 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VCC/VSSQ)
Parameters
Symbol
Conditions
Versions
Units
Note
133/100
Operating Current
(One bank active)
ICC1
Burst Length = 1
tRC ≥ tRC(min)
IOL = 0mA
810
mA
1
Precharge Standby Current
in Power Down Mode
ICC2P
CKE ≤ VIL(max), tCC = 10ns
20
mA
ICC2PS
CKE & CLK ≤ VIL(max), tCC = ∞
20
mA
Precharge Standby Current
in Non-Power Down Mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns
Input signals are charged one time during 20
180
mA
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC= ∞
Input signals are stable
90
mA
Active standby current in
power-down mode
ICC3P
CKE ≥ VIL(max), tCC = 10ns
50
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
50
Active standby in current non power-
down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are charged one time during 20ns
270
mA
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
input signals are stable
225
mA
Operating current (Burst mode)
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
990
mA
1
Refresh current
ICC5
tRC ≥ tRC(min)
1,800
mA
2
Self refresh current
ICC6
CKE ≤ 0.2V
20
mA
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