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參數(shù)資料
| 型號(hào)： | W3DG6432V10BD1-GG |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA140 |
| 封裝： | ROHS COMPLIANT, SODIMM-140 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 215K |
| 代理商： | W3DG6432V10BD1-GG |
W3DG6432V-BD1
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2007
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ADVANCED
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 ~ 4.6
V
Storage Temperature
TSTG
-55 ~ +150
°C
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if “ABSOLUTE MAXIMUM RATINGS” are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)
Parameter
Symbol
Min
Max
Unit
Note
Supply Voltage
VCC, VCCQ
3
3.6
V
Input High Voltage (Logic 1) All inputs
VIH
2VCC + 0.3
V
22
Input Low Voltage (Logic 0) All input
VIL
-0.3
0.8
V
22
Input Leakage Current:
Any input 0V ≤ VIN ≤ VCC
(All other pins not under test = 0V)
Command and
Address Inputs
II
-40
40
μA33
CK, S#
-20
20
μA33
DQM
-10
10
μA
Output High Voltage: DQ pins are
dislabled; 0V ≤ VIN ≤ VCCQ
DQ
IOZ
-10
10
μA
Output High Voltage (IOUT = -4mA)
VOH
2.4
V
Output Low Voltage (IOUT = 4mA)
VOL
0.4
V
See notes on page 6
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