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參數(shù)資料
| 型號： | W3DG6416V10D2 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 64 SYNCHRONOUS DRAM MODULE, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 130K |
| 代理商： | W3DG6416V10D2 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3DG6416V-D2
June 2003
Rev. 1
White Electronic Designs Corp. reserves the right to change products or specications without notice.
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Units
Voltage on any pin relative to VSS
-1.0 ~ 4.6
V
Voltage on VCC supply relative to VSS
-1.0 ~ 4.6
V
Storage Temperature
-55 ~ +150
°C
Power Dissipation
8
W
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect
device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, 0°C TA +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply Voltage
VCC
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
VCCQ+0.3
V1
Input Low Voltage
VIL
-0.3
—
0.8
V
2
Output High Voltage
VOH
2.4
—
V
IOH= -2mA
Output Low Voltage
VOL
—
0.4
V
IOL= -2mA
Input Leakage Current
ILI
-10
—
10
A
3
Note:
1. VIH (max)= 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. VIL (min)= -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(TA = 23°C, f = 1MHz, VCC = 3.3V, VREF=1.4V 6200mV)
Parameter
Symbol
Min
Max
Unit
Input Capacitance (A0-A12)
CIN1
-45
pF
Input Capacitance (RAS#,CAS#,WE#)
CIN2
-45
pF
Input Capacitance (CKE0)
CIN3
-25
pF
Input Capacitance (CK0,CK2)
CIN4
-13
pF
Input Capacitance (CS0,CS2)
CIN5
-15
pF
Input Capacitance (DQM0-DQM7)
CIN6
-10
pF
Input Capacitance (BA0-BA1)
CIN7
-45
pF
Data input/output capacitance (DQ0-DQ63)
COUT
-12
pF
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