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參數(shù)資料
| 型號： | W332M64V-100BI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA219 |
| 封裝： | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 351K |
| 代理商： | W332M64V-100BI |
11
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W332M64V-XBX
October 2006
Rev. 1
Parameter
Symbol
-100
-125
-133
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos. edge)
CL = 3
tAC
7
6
5.5
ns
CL = 2
tAC
766
ns
Address hold time
tAH
1
0.8
ns
Address setup time
tAS
2
1.5
ns
CLK high-level width
tCH
3
2.5
ns
CLK low-level width
tCL
3
2.5
ns
Clock cycle time (22)
CL = 3
tCK
10
8
7.5
ns
CL = 2
tCK
13
10
ns
CKE hold time
tCKH
1
0.8
ns
CKE setup time
tCKS
2
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
2
1.5
ns
Data-in hold time
tDH
1
0.8
ns
Data-in setup time
tDS
2
1.5
ns
Data-out high-impedance time
CL = 3 (10)
tHZ
7
6
5.5
ns
CL = 2 (10)
tHZ
766
ns
Data-out low-impedance time
tLZ
1
ns
Data-out hold time (load) (26)
tOH
3
ns
Data-out hold time (no load)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50
120,000
50
120,000
50
120,000
ns
ACTIVE to ACTIVE command period
tRC
70
68
ns
ACTIVE to READ or WRITE delay
tRCD
20
ns
Refresh period (8,192 rows) – Commercial, Industrial
tREF
64
ms
Refresh period (8,192 rows) – Military
tREF
16
ms
AUTO REFRESH period
tRFC
70
ns
PRECHARGE command period
tRP
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK + 7ns
1 CLK + 7.5
—
(24)
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
80
75
ns
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
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| W332M64V-100BM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W332M64V-100SBC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W332M64V-100SBI | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M64V-100SBM | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 100MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W332M64V-125BC | 制造商:Microsemi Corporation 功能描述:32M X 64 SDRAM, 3.3V, 125MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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