參數(shù)資料
型號： W29C020C-90Z
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
封裝： 0.600 INCH, LEAD FREE, PLASTIC, DIP-32
文件頁數(shù)： 25/27頁
文件大?。?/td> 176K
代理商： W29C020C-90Z
W29C020C
Publication Release Date: Nov. 23, 2006
- 7 -
Revision A7
6.4
Hardware Data Protection
The integrity of the data stored in the W29C020C is also hardware protected in the following ways:
(1) Noise/Glitch Protection: A #WE pulse of less than 15 nS in duration will not initiate a write cycle.
(2) VDD Power Up/Down Detection: The write and read operation are inhibited when VDD is less than
2.5V.
(3) Write Inhibit Mode: Forcing #OE low, #CE high, or #WE high will inhibit the write operation. This
prevents inadvertent writes during power-up or power-down periods.
(4) VDD power-on delay: When VDD reaches its sense level, the device will automatically timeout for 5
mS before any write (erase/program) operation.
6.5
Chip Erase Modes
The entire device can be erased by using a six-byte software command code. See the Software Chip
Erase Timing Diagram.
6.6
Boot Block Operation
There are two boot blocks (8K bytes each) in this device, which can be used to store boot code. One of
them is located in the first 8K bytes and the other is located in the last 8K bytes of the memory. The first
8K or last 8K of the memory can be set as a boot block by using a seven-byte command sequence.
See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the
data for the designated block cannot be erased or programmed (programming lockout); other memory
locations can be changed by the regular programming method. Once the boot block programming
lockout feature is activated, the chip erase function will be disabled. In order to detect whether the boot
block feature is set on the two 8K blocks, users can perform a six-byte command sequence: enter the
product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for
specific code), and then read from address "00002 hex" (for the first 8K bytes) or "3FFF2 hex" (for the
last 8K bytes). If the output data is "FF hex," the boot block programming lockout feature is activated; if
the output data is "FE hex," the lockout feature is deactivated and the block can be programmed.
To return to normal operation, perform a three-byte command sequence to exit the identification mode.
For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
6.7
Data Polling (DQ7)- Write Status Detection
The W29C020C includes a data polling feature to indicate the end of a write cycle. When the
W29C020C is in the internal write cycle, any attempt to read DQ7 from the last byte loaded during the
page/byte-load cycle will receive the complement of the true data. Once the write cycle is completed.
DQ7 will show the true data. See the #OE Polling Timing Diagram.
相關(guān)PDF資料
PDF描述
W29D040C-55C 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
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W29EE512-90 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
W29GL064CB7S 64M X 1 FLASH 3V PROM, 70 ns, PDSO48
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W29C020CP12B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W29C020CP12N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
W29C020CP70B 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 8 CMOS FLASH MEMORY
W29C020CP90B 功能描述:IC FLASH 2MBIT 90NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
W29C020CP90N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|256KX8|CMOS|LDCC|32PIN|PLASTIC
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