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參數(shù)資料
| 型號： | W27C257P-12 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 32K X 8 EEPROM 12V, 120 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 153K |
| 代理商： | W27C257P-12 |
W27C257
Publication Release Date: September 1998
- 7 -
Revision A2
DC PROGRAMMING CHARACTERISTICS
(VCC = 5.0V
±5%, TA = 25° C ±5° C)
PARAMETER
SYM.
CONDITIONS
LIMITS
UNIT
MIN.
TYP.
MAX.
Input Load Current
ILI
VIN = VIL or VIH
-10
-
10
A
VCC Program Current
ICP
CE = VIL
-
30
mA
VPP Program Current
IPP
CE = VIL
-
30
mA
Input Low Voltage
VIL
-
-0.3
-
0.8
V
Input High Voltage
VIH
-
2.4
-
5.5
V
Output Low Voltage (Verify)
VOL
IOL = 2.1 mA
-
0.45
V
Output High Voltage (Verify)
VOH
IOH = -0.4 mA
2.4
-
V
A9 Silicon I.D. Voltage
VID
-
11.5
12.0
12.5
V
VPP Program Voltage
VPP
-
11.75
12.0
12.25
V
VCC Supply Voltage (Program)
VCP
-
4.5
5.0
5.5
V
AC PROGRAMMING/ERASE CHARACTERISTICS
(VCC = 5.0V
±5%, TA = 25° C ±5° C)
PARAMETER
SYM.
LIMITS
UNIT
MIN.
TYP.
MAX.
VPP Setup Time
TVPS
2.0
-
S
Address Setup Time
TAS
2.0
-
S
Data Setup Time
TDS
2.0
-
S
CE Program Pulse Width
TPWP
95
100
105
S
CE Erase Pulse Width
TPWE
95
100
105
mS
Data Hold Time
TDH
2.0
-
S
OE Setup Time
TOES
2.0
-
S
Data Valid from OE
TOEV
-
150
nS
OE High to Output High Z
TDFP
0
-
130
nS
Address Hold Time
TAH
0
-
S
Address Hold Time after CE High (Erase)
TAHC
2.0
-
S
Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W27C4096 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 16 ELECTRICALLY ERASABLE EPROM |
| W27C4096-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 16 ELECTRICALLY ERASABLE EPROM |
| W27C4096-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 16 ELECTRICALLY ERASABLE EPROM |
| W27C4096P-12 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 16 ELECTRICALLY ERASABLE EPROM |
| W27C4096P-15 | 制造商:WINBOND 制造商全稱:Winbond 功能描述:256K X 16 ELECTRICALLY ERASABLE EPROM |
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