參數(shù)資料
型號(hào)： W25Q16DWSNIP
廠商： WINBOND ELECTRONICS CORP
元件分類： PROM
英文描述： 16M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, GREEN, PLASTIC, SOIC-8
文件頁數(shù)： 66/83頁
文件大小： 1268K
代理商： W25Q16DWSNIP
W25Q16DW
Publication Release Date: April 01, 2011
- 69 -
Preliminary - Revision A
11. ELECTRICAL CHARACTERISTICS
11.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to VCC+0.4
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–1.0V to VCC+1.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
11.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage(1)
VCC
FR = 104MHz,
fR = 50MHz
1.65
1.95
V
Ambient Temperature,
Operating
TA
Industrial
–40
+85
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W25Q16DWSSIG 功能描述:IC FLASH SPI 16MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
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W25Q16V 制造商:WINBOND 制造商全稱:Winbond 功能描述:16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
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