參數(shù)資料
型號: W24L25
廠商: WINBOND ELECTRONICS CORP
英文描述: 32K×8bit CMOS Static RAM(32K×8位CMOS靜態(tài)RAM)
中文描述: 32K的× 8位的CMOS靜態(tài)RAM(32K的× 8位的CMOS靜態(tài)RAM)的
文件頁數(shù): 2/10頁
文件大小: 148K
代理商: W24L25
Preliminary W24L25
- 2 -
TRUTH TABLE
CS
H
L
L
L
OE
WE
MODE
I/O1 I/O8
V
DD
CURRENT
X
H
L
X
X
H
H
L
Not Selected
Output Disable
Read
Write
High Z
High Z
Data Out
Data In
I
SB
, I
SB1
I
DD
I
DD
I
DD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to +4.6
-0.5 to V
DD
+0.5
1.0
-65 to +150
0 to 70
UNIT
V
V
W
°
C
°
C
Supply Voltage to V
SS
Potential
Input/Output to V
SS
Potential
Allowable Power Dissipation
Storage Temperature
Operating Temperature
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(V
DD
= 3.0V to 3.6V; V
SS
= 0V; T
A
(
°
C) = 0 to 70)
PARAMETER
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
SYM.
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
-
-
VIN = V
SS
to V
DD
VI/O = V
SS
to V
DD
,
CS
= V
IH
(min.) or
OE
= V
IH
(min.) or
WE
= V
IL
(max.)
IOL = +2.1 mA
IOH = -1.0 mA
MIN.
-0.5
+2.0
-1
-1
MAX.
+0.6
V
DD
+0.5
+1
+1
UNIT
V
V
μ
A
μ
A
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
V
OL
V
OH
I
DD
-
0.4
-
35
V
V
mA
2.2
-
CS = V
IL
(max.) and
I/O = 0 mA,
Cycle = min. Duty = 100%
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