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參數(shù)資料
| 型號： | W15NB50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET |
| 中文描述： | N溝道500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 107K |
| 代理商： | W15NB50 |
STW15NB50
STH15NB50FI
N-CHANNEL 500V - 0.33
- 14.6A -
T0-247/ISOWATT218 PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.33
I
EXTREMELY HIGH dv/dt CAPABILITY
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW15NB50
STH15NB50FI
500
500
±
30
10.5
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
V
V
A
A
A
W
14.6
9.2
58.4
190
0.64
6.6
58.4
80
1.52
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
4
4000
-65 to 150
150
TYPE
V
DSS
R
DS(on)
< 0.36
<
0.36
I
D
STW15NB50
STH15NB50FI
500 V
500 V
14.6 A
10.5 A
June 1998
1
2
3
TO-247
ISOWATT218
1
2
3
1/9
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