參數(shù)資料
型號： VWM350-0075P
廠商： IXYS CORP
元件分類： JFETs
英文描述： Three phase full bridge with Trench MOSFETs
中文描述： 340 A, 75 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/2頁
文件大?。?/td> 73K
代理商： VWM350-0075P
1 - 2
2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXYS reserves the right to change limits, test conditions and dimensions.
Three phase full bridge
with Trench MOSFETs
Applications
AC drives
in automobiles
-electric power steering
-starter generator
-etc...
in industrial vehicles
-propulsion drives
-fork lift drives
in battery supplied equipment
Features
MOSFETs in trench technology:
-low R
DSon
-optimized intrinsic reverse diode
package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
with optimized heat transfer
V
DSS
= 75 V
R
DSon
= 2.3 m
I
D25
= 340 A
MOSFETs T1 - T6
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
75
V
V
GS
±20
V
I
D25
I
D80
T
C
= 25°C
T
C
= 80°C
340
250
A
A
I
D25
I
D80
T
C
= 25°C (diode)
T
C
= 80°C (diode)
340
250
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
2.3
3.3 m
V
GSth
V
DS
= 20 V;
I
D
= 2 mA
2
4
V
I
DSS
V
DS
= 75V;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.02
mA
mA
0.25
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
0.2
μA
Q
g
Q
gs
Q
gd
450
60
170
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
60
170
320
200
ns
ns
ns
ns
V
F
(diode) I
F
= 175 A; V
GS
= 0 V
1.1
1.6
V
t
rr
(diode) I
F
= 40 A; -di/dt = 200 A/μs; V
DS
= 30 V
90
ns
R
thJC
R
thJH
Ratings and characteristic values are per individual MOSFET
0.26 K/W
with heat transfer paste
0.51
K/W
V
GS
= 10 V; V
DS
= 0.5 V
DSS
; I
D
= 175A
V
GS
= 10 V; V
DS
= 0.5 V
DSS
;
I
D
G
= 2.2
VWM 350-0075P
Preliminary data
L+
G1
L1
L2
L3
S1
G2
S2
S5
G4
S4
G6
L-
G3
S3
G5
S6
T1
T2
T3
T4
T5
T6
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