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參數(shù)資料
| 型號(hào)： | VW2X30-12IO1 |
| 英文描述： | THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|14A I(T) |
| 中文描述： | 可控硅模塊|交流開(kāi)關(guān)| 1.2KV五（無(wú)線資源管理）|第14A我（翻譯） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | VW2X30-12IO1 |
2000 IXYS All rights reserved
2 - 3
VW 2x30
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
V
T
V
T0
r
T
V
GT
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
= 45 A; T
VJ
= 25 C
For power-loss calculations only
5
mA
1.81
V
0.8
25
V
m
V
D
= 6 V;
T
VJ
= 25 C
T
VJ
= -40 C
T
VJ
= 25 C
T
VJ
= -40 C
V
D
= 2/3 V
DRM
1.5
1.6
100
200
V
V
I
GT
V
D
= 6 V;
mA
mA
V
GD
I
GD
I
L
T
VJ
= T
VJM
;
0.2
V
5
mA
T
VJ
= 25 C; t
P
= 10 s
I
G
= 0.45 A; di
G
/dt = 0.45 A/ s
T
VJ
= 25 C; V
D
= 6 V; R
GK
=
T
VJ
= 25 C; V
D
= 1/2 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/ s
T
VJ
= T
; I
= 20 A, t
= 200 s; di/dt = -10 A/ s
V
R
= 100 V; dv/dt = 15 V/ s; V
D
= 2/3 V
DRM
per thyristor; DC
per module
per thyristor; DC
per module
450
mA
I
H
t
gd
200
mA
2
s
t
q
typ.
150
s
R
thJC
1.7
0.43
2.0
0.5
K/W
K/W
K/W
K/W
R
thJK
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
25
30
35
40
45
50
A
1
10
100
1000
I
G
0.1
1
10
V
G
mA
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
3
4
2
1
5
6
10
100
1000
1
10
100
1000
μ
s
t
gd
I
G
0.01
0.1
1
10
0
20
40
60
80
100
120
140
A
s
I
RMS
V
I
F
T
VJ
= 25
°
C
T
VJ
=125
°
C
T
VJ
= 125
°
C
T
K
= 85
°
C
mA
T
VJ
= 25
°
C
typ.
Limit
V
T
t
VW2x30
Fig. 2 Gate trigger delay time
Fig. 1 Gate trigger characteristics
Fig. 4 Rated RMS current versus time
(360
°
conduction)
Fig. 3 Forward current versus voltage
drop per leg
Dimensions in mm (1 mm = 0.0394")
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