參數(shù)資料
型號(hào): VVZB120-16IO1
廠商: IXYS CORP
元件分類: 晶閘管
英文描述: Three Phase Half Controlled Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
中文描述: 77 A, 1600 V, SCR
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 76K
代理商: VVZB120-16IO1
2000 IXYS All rights reserved
1 - 3
V
CES
V
GE
T
= 25°C to 150°C
Continuous
1200
20
V
V
I
C25
I
C80
I
CM
T
case
= 25°C, DC
T
case
= 80°C, DC
t
p
= Pulse width limited by T
VJM
78
A
52
A
140
A
P
tot
T
case
= 80°C
222
W
V
RRM
1200
V
I
F(AV)
I
F(RMS)
I
FRM
T
case
= 80°C, rectangular d = 0.5
T
case
= 80°C, rectangular d = 0.5
T
case
= 80°C, t
P
= 10 μs, f = 5 kHz
27
38
tbd
A
A
A
I
FSM
T
VJ
= 45°C, t = 10 ms
T
VJ
= 150°C,t = 10 ms
200
180
A
A
P
tot
T
case
= 80°C
64
W
Symbol
Conditions
Maximum Ratings
I
dAV
I
FRMS
/I
TRMS
T
case
= 80°C, sinusoidal 120°
T
case
= 80°C, per leg
120
77
A
A
I
FSM
/I
TSM
T
VJ
= 25°C,t = 10 ms, V
R
= 0 V
T
VJ
= 150°C,t = 10 ms, V
R
= 0 V
750
670
A
A
I
2
t
T
VJ
= 25°C,t = 10 ms, V
R
= 0 V
T
VJ
= 150°C,t = 10 ms, V
R
= 0V
2810
2240
A
A
(di/dt)
cr
T
= T
f = 50 Hz, t
P
= 200 μs
V
D
=
2
/
V
I
G
= 0.45 A,
di
G
/dt = 0.45 A/μs
repetitive, I
T
= 150 A
150
A/μs
non repetitive, I
T
= I
d(AV)
/3
500
A/μs
(dv/dt)
cr
T
VJ
= T
; V
=
2
/
V
R
GK
= ; method 1 (linear voltage rise)
1000
V/μs
P
GM
T
= T
VJM
I
T
= I
d(AV)
/3
t
P
= 30 μs
t
P
=300 μs
t
P
= 10 ms
10
W
W
W
5
1
P
GAVM
0.5
W
V
RRM
V
Type
1200
1400
1600
VVZB 120-12 io1
VVZB 120-14 io1
VVZB 120-16 io1
I
F
R
Features
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Ultrafast freewheel diode
Convenient package outline
Applications
Drive Inverters with brake system
Advantages
2 functions in one package
No external isolation
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
VVZB 120
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 1200-1600 V
I
dAV
= 120 A
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
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