參數(shù)資料
型號(hào)： VUB120-12NO1
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
中文描述： IGBT
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 69K
代理商： VUB120-12NO1
2004 IXYS All rights reserved
1 - 2
VUB 120 / 160
4
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
Type
V
V
RRM
Type
V
1200 VUB 120-12 NO2 1600 VUB 120-16 NO2
1200 VUB 160-12 NO2 1600 VUB 160-16 NO2
Features
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Ultrafast diode
Convenient package outline
l
UL registered E 72873
Case and potting UL94 V-0
Applications
Drive Inverters with brake system
Advantages
2 functions in one package
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
Preliminary Data
V
RRM
= 1200/1600 V
I
dAVM
= 188 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
M/O
10
W U S/T
10
Symbol
Conditions
Maximum Ratings
V
RRM
I
dAVM
I
FSM
1200/1600
V
A
T
C
= 80°C, rect., d =
1
/
3
T
VJ
= 45°C,
T
VJ
= 150°C,
188
t = 10 ms, V
R
= 0 V
t = 10 ms, V
R
= 0 V
1100
960
A
A
I
2
t
T
VJ
= 45°C,
T
VJ
= 150°C,
T
C
= 25°C per diode
t = 10 ms, V
R
= 0 V
t = 10 ms, V
R
= 0 V
6050
4610
A
A
P
tot
160
W
VUB 120
1200
VUB160
1200
± 20
V
CES
V
GE
I
C25
I
C80
T
= 25°C to 150°C
Continuous
V
V
± 20
T
C
= 25°C, DC
T
C
= 80°C, DC
T
C
= 80°C, d = 0.5
t
p
= Pulse width limited by T
VJM
T
C
= 25°C
140
100
95
177
125
95
A
A
A
I
CM
P
tot
V
RRM
I
FAV
I
FRMS
I
FSM
280
350
A
570
690
W
1200
V
A
A
T
C
= 80°C, rect. d =
T
C
= 80°C, rect. d =
T
VJ
= 45°C,
T
VJ
= 150°C,
T
C
= 25°C
34
48
t = 10 ms
t = 10 ms
200
180
A
A
P
tot
T
VJ
T
VJM
T
stg
V
ISOL
140
W
-40...+150
°C
°C
°C
150
-40...+125
50/60 Hz
I
ISOL
≤
1 mA
Mounting torque
t = 1 min
t = 1 s
3000
3600
V~
V~
M
d
(M5)
(10-32 UNF)
2-2.5
18-22
Nm
lb.in.
d
S
d
A
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
Weight
typ.
80
g
I
F
M
R
Data according to IEC 60747
M1/O1
S 1
A6
~
E6
~
K6
~
U1/W1
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VUB120-12NO2 功能描述:IGBT 模塊 120 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
VUB120-16NO1 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
VUB120-16NO2 功能描述:IGBT 模塊 120 Amps 1600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
VUB120-16NOX 功能描述:IGBT 模塊 Standard Rectifier Bridge+Brake Unit RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
VUB120-16NOXT 功能描述:IGBT 模塊 Standard Rectifier Bridge+Brake Unit RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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