參數(shù)資料
型號: VTT3423LA
廠商: PerkinElmer Inc.
英文描述: .025 NPN Phototransistors
中文描述: .025 NPN光電晶體管
文件頁數(shù): 1/1頁
文件大?。?/td> 22K
代理商: VTT3423LA
96
.025" NPN Phototransistors
IRT Long T-1 (3 mm) Plastic Package
VTT3423LA, 4LA, 5LA
PACKAGE DIMENSIONS
inch (mm)
CASE 50A
LONG T-1 (3 mm
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor in a
3 mmdiameter, lensed plastic package. The package
material transmts infrared and blocks visible light. These
devices are spectrally and mechanically matched to the
VTE33xxLA series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
MaximumTemperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
MaximumCurrent:
Lead Soldering Temperature:
(1.6 mmfromcase, 5 sec. max.)
-40°C to 100°C
-40°C to 100°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also typical curves, pages 91-92)
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emtter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
θ
1/2
l
C
l
CEO
V
BR(CEO)
V
BR(ECO)
V
CE(SAT)
t
R
/t
F
mA
H
fc (mW/cm
2
)
V
CE
= 5.0 V
H = 0
l
C
= 100 μA
H = 0
l
E
= 100 μA
H = 0
l
C
= 1.0 mA
H = 400 fc
l
C
= 1.0 mA
R
L
= 100
Min.
Max.
(nA)
Max.
V
CE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
μsec, Typ.
Typ.
VTT3423LA
VTT3424LA
VTT3425LA
1.0
2.0
3.0
20 (1)
20 (1)
20 (1)
100
100
100
10
10
10
30
30
30
5.0
5.0
5.0
0.25
0.25
0.25
3.0
4.0
5.0
±10°
±10°
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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