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參數(shù)資料
| 型號： | VTT1116 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | .050 NPN Phototransistors |
| 中文描述： | .050 NPN光電晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | VTT1116 |
103
.050" NPN Phototransistors
TO-46 Lensed Package
VTT1115, 16, 17
PACKAGE DIMENSIONS
inch (mm)
CASE 3
TO-46 HERMETIC (LENSED)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection fromhostile
environments The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE11xx series of IREDs.
ABSOLUTE MAXIMUMRATINGS
(@ 25°C unless otherwise noted)
MaximumTemperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
MaximumCurrent:
Lead Soldering Temperature:
(1.6 mmfromcase, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also typical curves, pages 91-92)
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emtter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
θ
1/2
l
C
l
CEO
V
BR(CEO)
V
BR(ECO)
V
CE(SAT)
t
R
/t
F
mA
H
fc (mW/cm
2
)
V
CE
= 5.0 V
H = 0
l
C
= 100 μA
H = 0
l
E
= 100 μA
H = 0
l
C
= 1.0 mA
H = 400 fc
l
C
= 1.0 mA
R
L
= 100
Min.
Max.
(nA)
Max.
V
CE
(Volts)
Volts, Mn.
Volts, Mn.
Volts, Max.
μsec, Typ.
Typ.
VTT1115
VTT1116
VTT1117
1.0
2.0
4.0
—
—
—
20 (1)
20 (1)
20 (1)
100
100
100
10
10
10
30
30
30
6.0
4.0
4.0
0.40
0.40
0.40
5.0
8.0
8.0
±15°
±15°
±15°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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| VTT1212 | .040 NPN Phototransistors |
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| VTT3121E | PHOTOTRANSISTOR | NPN | 825NM PEAK WAVELENGTH | 25M | CAN-2.0 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VTT1116H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO TRANSISTOR; Transistor Polarity:NPN; Power Consumption:250mW; Viewing Angle:15; No. of Pins:3; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes |
| VTT1117 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:.050 NPN Phototransistors |
| VTT1117H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO TRANSISTOR; Transistor Polarity:NPN; Power Consumption:250mW; Viewing Angle:15; No. of Pins:3; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes |
| VTT1131 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 825NM PEAK WAVELENGTH | 200M | TO-18 |
| VTT1132 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 825NM PEAK WAVELENGTH | 200M | TO-18 |
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