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參數(shù)資料
| 型號： | VTS3184 |
| 英文描述： | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| 中文描述： | 光伏電池的紅外探測 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 33K |
| 代理商： | VTS3184 |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VTS3186 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3187 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3190 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3191 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3192 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VTS3184H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:40nA; Diode Case Style:44C; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3185H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:20nA; Diode Case Style:44A; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3186H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:10nA; Diode Case Style:44B; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3K10G4SS | 制造商:Promise Technologies 功能描述:SAN W/2-10G ISCSI TO 6G SAS - Bulk |
| VTS3K1G4SS | 制造商:Promise Technologies 功能描述:SAN W/6-1G ISCSI TO 6G SAS - Bulk |
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