| 型號(hào): | VTS3180 |
| 英文描述: | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| 中文描述: | 光伏電池的紅外探測(cè) |
| 文件頁(yè)數(shù): | 1/1頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商: | VTS3180 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VTS3182 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3185 | PHOTOVOLTAIC CELL FOR INFRARED DETECTION |
| VTS3172 | GENERAL-PURPOSE PHOTOVOLTAIC CELL |
| VTS3170 | GENERAL-PURPOSE PHOTOVOLTAIC CELL |
| VTS3128 | GENERAL-PURPOSE PHOTOVOLTAIC CELL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VTS3180H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:200nA; Diode Case Style:44A; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3181H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:100nA; Diode Case Style:44C; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3182H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:50nA; Diode Case Style:44A; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3183H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:50nA; Diode Case Style:44C; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |
| VTS3184H | 制造商:Excelitas Technologies Corporation 功能描述:PHOTO DIODE; Wavelength of Peak Sensitivity:925nm; Dark Current:40nA; Diode Case Style:44C; No. of Pins:2; Operating Temperature Min:-40C; Operating Temperature Max:125C; Operating Temperature Range:-40C to +125C ;RoHS Compliant: Yes |