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參數(shù)資料
| 型號： | VTP100 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | VTP Process Photodiodes |
| 中文描述： | VTP過程光電二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | VTP100 |
47
VTP Process Photodiodes
VTP100
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
sidelooker package. The package material is
infrared transmtting (blocking visible light).
These diodes exhibit low dark current and fast
speed of response.
PACKAGE DIMENSIONS
inch (mm)
CASE 52 FLAT SIDELOOKER
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUMRATINGS
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
VTP100
UNITS
Mn.
Typ.
Max.
I
SC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
35
55
.24
300
-2.0
μA
%/°C
mV
mV/°C
nA
G
pF
A/(W/cm
2
)
A/W
nm
nm
V
Degrees
W
cm Hz
TC I
SC
V
OC
TC V
OC
I
D
R
SH
C
J
Re
S
R
λ
range
λ
p
V
BR
θ
1/2
NEP
D*
30
.25
50
.036
.047
.50
725
1150
925
140
±70
30
2.5 x 10
-14
(Typ.)
1.1 x 10
13
(Typ.)
/ W
Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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相關(guān)代理商/技術(shù)參數(shù) |
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| VTP-10001 | 制造商:PMI 制造商全稱:PMI 功能描述:LOW COST TOROIDAL POWER INDUCTORS |
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| VTP-10005 | 制造商:PMI 制造商全稱:PMI 功能描述:LOW COST TOROIDAL POWER INDUCTORS |
| VTP-10007 | 制造商:PMI 制造商全稱:PMI 功能描述:LOW COST TOROIDAL POWER INDUCTORS |
| VTP100C | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:VTP Process Photodiodes |
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