參數(shù)資料
型號(hào)： VTE1291W-1
廠商： PerkinElmer Inc.
英文描述： GaAlAs Infrared Emitting Diodes
中文描述： 紅外發(fā)光二極管的GaAIAs
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 32K
代理商： VTE1291W-1
118
GaAlAs Infrared Emitting Diodes
T-1 (5 mm) Plastic Package — 880 nm
VTE1291-1, 1291-2
PACKAGE DIMENSIONS
inch (mm)
CASE 26
CHIP SIZE: .015" x .015"
T-1 (5 mm)
DESCRIPTION
This narrow beamangle 5 mmplastic packaged emtter contains a double wirebonded, GaAlAs, 880 nmIRED chip. This cost effective
design is well suited for dc or high current pulse applications. This device is a UL recognized component for smoke alarmapplications
(UL file #S3506).
ABSOLUTE MAXIMUMRATINGS @ 25°C
(unless otherwise noted)
MaximumTemperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
MaximumContinuous Current:
Derate above 30°C:
Peak Forward Current, 10 μs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
MaximumReverse Voltage:
MaximumReverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise: 1.0 μs
Fall: 1.0 μs
Lead Soldering Temperature:
(1.6 mmfromcase, 5 seconds max.)
5.0V
10 μA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
θ
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1291-1
VTE1291-2
2.5
5.0
3.3
6.5
36
36
6.4
6.4
32
65
20
25
100
100
1.5
1.5
2.0
2.0
±12°
±12°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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參數(shù)描述
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