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參數(shù)資料
| 型號(hào)： | VTE1281W-2 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | GaAlAs Infrared Emitting Diodes |
| 中文描述： | 紅外發(fā)光二極管的GaAIAs |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 32K |
| 代理商： | VTE1281W-2 |
114
GaAlAs Infrared Emitting Diodes
T-1 (5 mm) Plastic Package — 880 nm
VTE1281-1, -2
PACKAGE DIMENSIONS
inch (mm)
CASE 26
CHIP SIZE: .015" x .015"
T-1 (5 mm)
DESCRIPTION
This narrow beamangle 5 mmdiameter plastic packaged emtter contains a mediumarea, single wirebonded, GaAlAs, 880 nm high
efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications.
ABSOLUTE MAXIMUMRATINGS @ 25°C
(unless otherwise noted)
MaximumTemperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
MaximumContinuous Current:
Derate above 30°C:
Peak Forward Current, 10 μs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
MaximumReverse Voltage:
MaximumReverse Current @ V
R
= 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ I
F
= 20 mA
Rise: 1.0 μs
Fall: 1.0 μs
Lead Soldering Temperature:
(1.6 mmfromcase, 5 seconds max.)
5.0V
10 μA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
θ
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE1281-1
VTE1281-2
2.5
5.0
3.3
6.5
36
36
6.4
6.4
32
65
20
25
100
100
1.5
1.5
2.0
2.0
±10°
±10°
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VTE1281W-1 | GaAlAs Infrared Emitting Diodes |
| VTE1281F | GaAlAs Infrared Emitting Diodes |
| VTE1285 | GaAlAs Infrared Emitting Diodes |
| VTE1291-1 | GaAlAs Infrared Emitting Diodes |
| VTE1291-2 | GaAlAs Infrared Emitting Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VTE1281W-2H | 制造商:Excelitas Technologies Corporation 功能描述:IR Emitting Diode 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE; Peak Wavelength:880nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1ns; Radiant Intensity:65mW/Sr; Viewing Angle:10; Forward Voltage VF Max:1.5V; Diode Case Style:T-1 3/4 ;RoHS Compliant: Yes |
| VTE1285 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes |
| VTE1285H | 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE; Peak Wavelength:880nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:39mW/Sr; Viewing Angle:8; Forward Voltage VF Max:1.5V; Operating Temperature Min:-40C;RoHS Compliant: Yes |
| VTE1291-1 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:GaAlAs Infrared Emitting Diodes |
| VTE1291-1H | 制造商:Excelitas Technologies Corporation 功能描述:IR EMITTER, 880NM, T-1 3/4, THROUGH HOLE; Peak Wavelength:880nm; Forward Current If(AV):100mA; Rise Time:1s; Fall Time tf:1s; Radiant Intensity:32mW/Sr; Viewing Angle:12; Forward Voltage VF Max:1.5V; Diode Case Style:T-1 3/4 ;RoHS Compliant: Yes |
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