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參數(shù)資料
| 型號： | VSKT56/14P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 90.42 A, 1400 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, ADD-A-PAK-7 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 297K |
| 代理商： | VSKT56/14P |
Document Number: 94419
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 23-Apr-08
3
VSK.41, .56..PbF Series
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90
Note
Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56
UNITS
Maximum peak gate power
PGM
10
W
Maximum average gate power
PG(AV)
2.5
Maximum peak gate current
IGM
2.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum gate voltage required to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
4.0
TJ = 25 °C
2.5
TJ = 125 °C
1.7
Maximum gate current required to trigger
IGT
TJ = - 40 °C
Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
15
mA
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt (1)
TJ = 125 °C, linear to 0.67 VDRM
500
V/s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41 VSK.56
UNITS
Junction operating and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per module
RthJC
DC operation
0.23
0.20
K/W
Typical thermal resistance, case to heatsink
RthCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
5
Nm
busbar
3
Approximate weight
110
g
4oz.
Case style
JEDEC
TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.41
0.11
0.13
0.17
0.23
0.34
0.09
0.14
0.18
0.23
0.34
°C/W
VSK.56
0.09
0.11
0.13
0.18
0.27
0.07
0.11
0.14
0.19
0.28
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VSKT56-16 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A |
| VSKT5616P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A |
| VSKT5616S90P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A |
| VSKT57/04P | 功能描述:SCR模塊 400 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復通態(tài)電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態(tài)電壓 VDRM:1.6 kV 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
| VSKT57/06P | 功能描述:SCR模塊 600 Volt 60 Amp RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復通態(tài)電流:4000 A 最大轉折電流 IBO:4200 A 額定重復關閉狀態(tài)電壓 VDRM:1.6 kV 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:20 mA 開啟狀態(tài)電壓:1.43 V 保持電流（Ih 最大值）: 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風格:Chassis 封裝 / 箱體:INT-A-PAK |
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