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參數(shù)資料
| 型號： | VSKT41/08P |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 70.65 A, 800 V, SCR, TO-240AA |
| 封裝： | ROHS COMPLIANT, ADD-A-PAK-7 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 297K |
| 代理商： | VSKT41/08P |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94419
2
Revision: 23-Apr-08
VSK.41, .56..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules),
45/60 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSK.41/.56
04
400
500
400
15
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum average on-state current
(thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
45
60
A
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS
on-state current, as AC switch
IO(RMS)
100
135
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
850
1310
t = 8.3 ms
890
1370
t = 10 ms
100 % VRRM
reapplied
715
1100
t = 8.3 ms
750
1150
t = 10 ms
TJ = 25 °C
no voltage reapplied
940
1450
t = 8.3 ms
985
1520
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
3.61
8.56
kA2s
t = 8.3 ms
3.30
7.82
t = 10 ms
100 % VRRM
reapplied
2.56
6.05
t = 8.3 ms
2.33
5.53
t = 10 ms
TJ = 25 °C, no voltage reapplied
4.42
10.05
t = 8.3 ms
4.03
9.60
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 to 10 ms, no voltage reapplied
36.1
85.6
kA2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.88
0.85
V
High level (4)
0.91
0.88
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
5.90
3.53
m
Ω
High level (4)
5.74
3.41
Maximum peak on-state or
forward voltage
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.81
1.54
V
VFM
IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 s, tp > 6 s
150
A/s
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)
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