參數(shù)資料
型號(hào)： VQ2001J
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-30V，夾斷電流-0.6A的P溝道增強(qiáng)型MOSFET)
中文描述： P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓- 30V的，夾斷電流，電流0.6A的P溝道增強(qiáng)型MOSFET的）
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 72K
代理商： VQ2001J
VP0300L/LS, VQ2001J/P
Vishay Siliconix
Document Number: 70217
S-00591—Rev. D, 04-Apr-00
www.vishay.com FaxBack 408-970-5600
11-1
P-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VP0300L
2.5 @ V
GS
= –12 V
2.5 @ V
GS
= –12 V
2 @ V
GS
= –12 V
2 @ V
GS
= –12 V
–2 to –4.5
–0.32
VP0300LS
–30
–2 to –4.5
–0.5
VQ2001J
–2 to –4.5
–0.6
VQ2001P
–2 to –4.5
–0.6
High-Side Switching
Low On-Resistance: 1.5
Moderate Threshold: –3.1 V
Fast Switching Speed: 17 ns
Low Input Capacitance: 60 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TO-226AA
(TO-92)
Top View
VP0300L
S
D
G
1
2
3
TO-92S
Top View
VP0300LS
S
D
G
1
2
3
Plastic:
Sidebraze: VQ2001P
VQ2001J
S
3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
D
2
D
3
P
P
P
P
Parameter
Symbol
b l
VP0300LS
VQ2001J/P
U i
Unit
VP0300L
Single
Total Quad
Drain-Source Voltage
V
DS
–30
–30
–30
–30
V
Gate-Source Voltage
V
GS
20
20
20
20
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
–0.32
–0.5
–0.6
–0.6
A
T
A
= 100 C
–0.2
–0.32
–0.37
–0.37
Pulsed Drain Current
a
I
DM
–2.4
–3
–2
–2
Power Dissipation
T
A
= 25 C
P
D
0.8
0.9
1.3
2
W
T
A
= 100 C
0.32
0.4
0.52
0.8
Maximum Junction-to-Ambient
R
thJA
156
139
96
62.5
C/W
Operating Junction and
Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Applications information may also be obtained via FaxBack, request document #70611.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VQ2001P 功能描述:MOSFET Quad 30V 0.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VQ2001P-2 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 30V 0.6A 14PDIP - Bulk
VQ2001P-E3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 30V 0.6A 14PDIP - Bulk
VQ2004J 功能描述:MOSFET Quad 60V 0.41A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VQ2004P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | P-CHANNEL | 60V V(BR)DSS | 410MA I(D) | DIP
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