參數(shù)資料
型號(hào)： VP2206
廠商： ELAN Microelctronics Corp .
英文描述： P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-60V,0.9Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 60V的，0.9Ω，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁數(shù)： 1/4頁
文件大?。?/td> 33K
代理商： VP2206
7-259
9
VP2206
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BV
DSS
/
BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
0.9
-4A
VP2206N2
VP2206N3
VP2206ND
MIL visual screening available
Order Number / Package
TO-39
TO-92
Die
Ordering Information
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
I
I
Excellent thermal stability
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
TO-39
D G S
Case: DRAIN
TO-92
S G D
相關(guān)PDF資料
PDF描述
VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs
VP230 3.3-V CAN TRANSCEIVERS
VP2410L P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-240V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管)
VP2450 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-500V,30Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VP2206N2 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3-G 功能描述:MOSFET 60V 0.9Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP2206N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VP2206N3-G P003 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 60V 0.64A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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