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參數(shù)資料
| 型號： | VP0300 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強模式垂直的DMOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | VP0300 |
7-227
9
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Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
Applications
■
■
Motor controls
■
■
Converters
■
■
Amplifiers
■
■
Switches
■
■
Power supply circuits
■
■
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
■
■
Free from secondary breakdown
■
■
Low power drive requirement
■
■
Ease of paralleling
■
■
Low C
ISS
and fast switching speeds
Excellent thermal stability
■
■
■
■
Integral Source-Drain diode
■
■
High input impedance and high gain
■
■
Complementary N- and P-channel devices
BV
DSS
/
BV
DGS
-30V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-92
2.5
-1.5A
VP0300L
Order Number / Package
Ordering Information
TO-92
S G D
– OBSOLETE –
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP0340N5 | TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 1.6A I(D) | TO-220AB |
| VP0340N1 | TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 2.7A I(D) | TO-3 |
| VP0350N1 | TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-3 |
| VP0350N5 | TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 1A I(D) | TO-220AB |
| VP0350 | P-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP0300B | 功能描述:MOSFET 30V 3A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300B-2 | 制造商:Vishay Siliconix 功能描述:P-CH ENHANCEMENT MOS TRANSISTOR 2 OHM (JANTX SIMILAR) - Bulk |
| VP0300B-E3 | 功能描述:MOSFET 30V 3A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300L | 功能描述:MOSFET 30V 0.32A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP0300LS | 功能描述:MOSFET 30V 0.5A 0.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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