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參數(shù)資料
| 型號： | VP0120 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強模式垂直的DMOS場效應管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 68K |
| 代理商： | VP0120 |
7-224
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-200
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.5
-3.5
V
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -50mA
V
GS
= -10V, I
D
= -100mA
V
GS
= -10V, I
D
= -100mA
V
DS
= -25V, I
D
= -100mA
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
Change in V
GS(th)
with Temperature
Gate Body Leakage
6.0
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
I
D(ON)
ON-State Drain Current
-100
-400
-350
-750
R
DS(ON)
25
40
15
25
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.6
%/
°
C
50
70
m
Input Capacitance
50
60
Common Source Output Capacitance
10
30
pF
Reverse Transfer Capacitance
5
10
Turn-ON Delay Time
4
10
Rise Time
4
10
Turn-OFF Delay Time
4
10
Fall Time
4
11
Diode Forward Voltage Drop
-1.0
V
I
SD
= -0.5A, V
GS
= 0V
I
SD
= -0.5A, V
GS
= 0V
Reverse Recovery Time
500
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VP0120
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
-0.1A
-0.35A
125
170
-0.1A
-0.35A
Thermal Characteristics
mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
-1 mA
V
I
D
= -1.0mA, V
GS
= 0V
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= -25V
I
D
= -350mA
R
GEN
= 25
ns
– OBSOLETE –
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VP0120N3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 100MA I(D) | TO-92 |
| VP0120ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP01A12B10 | 制造商:Hamlin Electronics 功能描述: |
| VP01A24A10 | 制造商:Hamlin Electronics 功能描述: |
| VP01C12A10 | 制造商:Hamlin Electronics 功能描述: |
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