參數(shù)資料
型號(hào)： VP0104
廠商： ELAN Microelctronics Corp .
英文描述： P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-40V,8Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述： P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 40V的，8Ω，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 27K
代理商： VP0104
7-220
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
Ceramic DIP
*
I
D
(continuous) is limited by max rated T
j
.
-0.25A
-0.8A
-0.25A
-0.8A
Refer to Arrays & Special Functions Section.
Thermal Characteristics
VP0104/VP0106/VP0109
Symbol
BV
DSS
Parameter
Min
-90
-60
-40
-1.5
Typ
Max
Unit
Conditions
VP0109
VP0106
VP0104
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-3.5
6.5
-100
-10
V
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
5.8
-1.0
mV/
°
C
nA
μ
A
I
D(ON)
ON-State Drain Current
-0.15
-0.50
-0.25
-1.2
R
DS(ON)
11
6.0
0.55
190
45
22
15
8.0
1.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
%/
°
C
m
150
60
30
pF
3
4
7
3
4
8
6
10
7
10
-1.2
400
-2.0
V
ns
I
SD
= -1.0A, V
GS
= 0V
I
SD
= -1.0A, V
GS
= 0V
V
I
D
= -1.0mA, V
GS
= 0V
-1 mA
A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
Static Drain-to-Source
ON-State Resistance
Drain-to-Source
Breakdown Voltage
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25
ns
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
相關(guān)PDF資料
PDF描述
VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs
VP0106N3 P-Channel Enhancement-Mode Vertical DMOS FETs
VP0120N3 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 100MA I(D) | TO-92
VP0120 P-Channel Enhancement-Mode Vertical DMOS FETs
VP0204N2 P-Channel Enhancement-Mode Vertical DMOS Power FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VP0104_07 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs
VP0104N3 功能描述:MOSFET 40V 8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP0104N3-G 功能描述:MOSFET 40V 8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VP0104N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VP0104N3-G P003 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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