參數(shù)資料
型號(hào): VO4158M-X007
廠商: VISHAY SEMICONDUCTORS
元件分類: 光電耦合器
英文描述: 1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER
封裝: ROHS COMPLIANT, SMD, 6 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 0K
代理商: VO4158M-X007
Document Number: 84634
For technical questions, please contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.5, 03-Nov-08
949
VO4157, VO4158
Optocoupler, Phototriac Output,
Zero Crossing, High dV/dt, Low
Input Current
Vishay Semiconductors
Note
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's thermal characteristics of
optocouplers application note.
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
LED power dissipation
at 25 °C
Pdiss
100
mW
Output power dissipation
at 25 °C
Pdiss
500
mW
Total power dissipation
at 25 °C
Ptot
600
mW
Maximum LED junction temperature
Tjmax
125
°C
Maximum output die junction temperature
Tjmax
125
°C
Thermal resistance, junction emitter to board
θ
JEB
150
°C/W
Thermal resistance, junction emitter to case
θ
JEC
139
°C/W
Thermal resistance, junction detector to board
θ
JDB
78
°C/W
Thermal resistance, junction detector to case
θ
JDC
103
°C/W
Thermal resistance, junction emitter to junction detector
θ
JED
496
°C/W
Thermal resistance, case to ambient
θ
CA
3563
°C/W
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.2
1.4
V
Reverse current
VR = 6 V
IR
0.1
10
A
Input capacitance
VF = 0 V, f = 1 MHz
CI
25
pF
OUTPUT
Repetitive peak off-state voltage
IDRM = 100 A
VO4157D/H/M
VDRM
700
V
VO4158D/H/M
VDRM
800
V
Off-state current
VD = VDRM, IF = 0
IDRM
100
A
On-state voltage
IT = 300 mA
VTM
3V
On-state current
PF = 1, VT(RMS) = 1.7 V
ITM
300
mA
Off-state current in inhibit state
IF = 2 mA, VDRM
IDINH
200
A
Holding current
IH
500
A
Zero cross inhibit voltage
IF = rated IFT
VIH
20
V
Critical rate of rise of off-state voltage
VD = 0.67 VDRM, TJ = 25 °C
dV/dtcr
5000
V/s
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